The given transistor operates in saturation region then what should be the value of $$V_{B B}$$ ?

$$\begin{aligned} & \left(R_{\text {out }}=200 \Omega, R_{\text {in }}=100 \mathrm{~k} \Omega, V_{C C}=3 \mathrm{~V},\right. \\\\ & \left.V_{B E}=0.7 \mathrm{~V}, V_{C E}=0, \beta=200\right) \end{aligned}$$

If voltage across a zener diode is 6V, then find out the value of maximum resistance in this condition.

Assertion : Photodiode and solar cell work on same mechanism.

Reason : Area is large for solar cell.

The diode used at a constant potential drop of 0.5 V at all currents and maximum power rating of 100 mW. What resistance must be connected in series diode, so that current in circuit is maximum?

Assertion Thickness of depletion layer is fixed in all semiconductor devices.

Reason No free charge carriers are available in depletion layer.

The current gain of a transistor in common emitter mode is 49. The change in collector current and emitter current corresponding to change in base current by $$5.0 \mu \mathrm{A}$$, will be

A specimen of silicon is to be made $$P$$-type semiconductor for this one atom of indium, on an average, is doped in $$5 \times 10^7$$ silicon atoms. If the number density of silicon is $$5 \times 10^{22}$$ atom/$$\mathrm{m}^3$$ then the number of acceptor atoms per $$\mathrm{cm}^3$$ will be

A proper combination of $$3 \mathrm{NOT}$$ and 1 NAND gates is shown. If $$A=0, B=1, C=1$$, then the output of this combination is