The following are the graphs of potential barrier versus width of the depletion region for a p-n junction diode.

Which of the following is correct?

$$ \text { In a p-n junction, the depletion layer of thickness } 1 \mu \mathrm{m} \text { has } 0.05 \mathrm{~V} \text { potential across it. The electric field in } N C^{-1} \text { is } $$

The mobility of the charge carriers increases with

In intrinsic semiconductors at room temperature, number of electrons and holes are