An LED is constructed from a $$p$$-$$n$$ junction diode using GaAsP. The energy gap is $$1.9 \mathrm{~eV}$$. The wavelength of the light emitted will be equal to

The energy gap between valance band and the conduction band for a given material is $$6 \mathrm{~eV}$$, then the material is :

In the given circuit the diode $$D_1$$ and $$D_2$$ have the forward resistance $$25 \Omega$$ and infinite backward resistance. When they are connected to the source as shown, the current passing through the $$175 \Omega$$ resistor is:

The reverse current in the semiconductor diode changes from $$20 \mu \mathrm{A}$$ to $$40 \mu \mathrm{A}$$ when the reverse potential is changed from $$10 \mathrm{~V}$$ to $$15 \mathrm{~V}$$, then the reverse resistance of the junction diode will be :