Analog Electronics
Diode Circuits and Applications
Marks 1Marks 2Marks 5
Frequency Response
Marks 2
Bjt and Mosfet Biasing
Marks 1Marks 2Marks 5
Feedback Amplifiers and Oscillator Circuits
Marks 1Marks 2Marks 5
Operational Amplifier
Marks 1Marks 2Marks 5
Small Signal Modeling
Marks 1Marks 2Marks 5
1
GATE EE 2015 Set 2
MCQ (Single Correct Answer)
+1
-0.3
When a bipolar junction transistor is operating in the saturation mode, which one of the following statements is TRUE about the state of its collector-base (CB) and the base-emitter (BE) junctions?
A
The CB junction is forward biased and the BE junction is reverse biased.
B
The CB junction is reverse biased and the BE junction is forward biased.
C
Both the CB and BE junctions are forward biased.
D
Both the CB and BE junctions are reverse biased.
2
GATE EE 2015 Set 2
Numerical
+1
-0
In the following circuit, the transistor is in active mode and $${V_C} = 2V.$$ To get $${V_C} = 4V,$$ we replace $${R_C}$$ with $${R_C}.$$ Then the ratio $$R{'_C}/{R_C}$$ is __________. GATE EE 2015 Set 2 Analog Electronics - Bjt and Mosfet Biasing Question 26 English
Your input ____
3
GATE EE 2014 Set 2
Numerical
+1
-0
The transistor in the given circuit should always be in active region. Take $${V_{CE\left( {sat} \right)}} = 0.2\,\,V,\,\,\,{V_{BE}} = 0.7\,\,V.\,\,\,$$ The maximum value of $${R_C}$$ in $$\Omega $$ which can be used, is __________. GATE EE 2014 Set 2 Analog Electronics - Bjt and Mosfet Biasing Question 28 English
Your input ____
4
GATE EE 2014 Set 1
MCQ (Single Correct Answer)
+1
-0.3
The magnitude of the mid-band voltage gain of the circuit shown in figure is (assuming $${h_{fe}}$$ of the transistor to be $$100$$) GATE EE 2014 Set 1 Analog Electronics - Bjt and Mosfet Biasing Question 29 English
A
$$1$$
B
$$10$$
C
$$20$$
D
$$100$$
GATE EE Subjects
Electromagnetic Fields
Signals and Systems
Engineering Mathematics
General Aptitude
Power Electronics
Power System Analysis
Analog Electronics
Control Systems
Digital Electronics
Electrical Machines
Electric Circuits
Electrical and Electronics Measurement