ExamSIDE
Questions (Powered by ExamGOAL)
Electronic Devices and VLSI
PN Junction
Marks 1Marks 2
Semiconductor Physics
Marks 1Marks 2
IC Basics and MOSFET
Marks 1Marks 2
BJT and FET
Marks 1Marks 2
Previous Next
1
GATE ECE 2016 Set 1
MCQ (Single Correct Answer)
+1
-0.3
What is the voltage Vout in the following circuit? GATE ECE 2016 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 49 English
A
0 V
B
$$\left(\left|V_T\;of\;PMOS\right|\;+\;V_T\;of\;NMOS\right)/2$$
C
Switching threshold of inverter
D
VDD
2
GATE ECE 2016 Set 3
MCQ (Single Correct Answer)
+1
-0.3
The figure shows the band diagram of a Metal Oxide Semiconductor (MOS). The surface region of this MOS is in GATE ECE 2016 Set 3 Electronic Devices and VLSI - IC Basics and MOSFET Question 46 English
A
inversion
B
accumulation
C
depletion
D
flat band
3
GATE ECE 2015 Set 3
MCQ (Single Correct Answer)
+1
-0.3
Which one of the following processes is preferred to from the gate dielectric (SiO2) of MOSFETs?
A
Sputtering
B
Molecular beam epitaxy
C
Wet oxidation
D
Dry oxidation
4
GATE ECE 2014 Set 3
MCQ (Single Correct Answer)
+1
-0.3
In MOSFET fabrication, the channel length is defined during the process of
A
Isolation oxide growth
B
Channel stop implantation
C
Poly-silicon gate patterning
D
Lithography step leading to the contact pads
Previous Next
Questions Asked from Marks 1
GATE ECE 2023 (1) GATE ECE 2017 Set 2 (3) GATE ECE 2016 Set 2 (2) GATE ECE 2016 Set 1 (2) GATE ECE 2016 Set 3 (1) GATE ECE 2015 Set 3 (1) GATE ECE 2014 Set 3 (1) GATE ECE 2014 Set 2 (1) GATE ECE 2014 Set 1 (3) GATE ECE 2013 (2) GATE ECE 2012 (1) GATE ECE 2011 (1) GATE ECE 2008 (2) GATE ECE 2005 (1) GATE ECE 2004 (1) GATE ECE 1994 (1)
GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics