Analog Electronics
Diode Circuits and Applications
Marks 1Marks 2Marks 5
Frequency Response
Marks 2
Bjt and Mosfet Biasing
Marks 1Marks 2Marks 5
Feedback Amplifiers and Oscillator Circuits
Marks 1Marks 2Marks 5
Operational Amplifier
Marks 1Marks 2Marks 5
Small Signal Modeling
Marks 1Marks 2Marks 5
1
GATE EE 2003
MCQ (Single Correct Answer)
+1
-0.3
The variation of drain current with gate-to-source voltage $$\left( {{{\rm I}_D} - {V_{GS}}} \right.$$ characteristic$$\left. \, \right)$$ of a MOSFET is shown in Figure. The MOSFET is GATE EE 2003 Analog Electronics - Bjt and Mosfet Biasing Question 33 English
A
an n-channel depletion mode device
B
an n-channel enhancement mode device
C
a p-channel depletion mode device
D
a p-channel enhancement mode device
2
GATE EE 1999
MCQ (Single Correct Answer)
+1
-0.3
The enhancement type n-channel MOSFET is represented by the symbol
A
GATE EE 1999 Analog Electronics - Bjt and Mosfet Biasing Question 35 English Option 1
B
GATE EE 1999 Analog Electronics - Bjt and Mosfet Biasing Question 35 English Option 2
C
GATE EE 1999 Analog Electronics - Bjt and Mosfet Biasing Question 35 English Option 3
D
GATE EE 1999 Analog Electronics - Bjt and Mosfet Biasing Question 35 English Option 4
3
GATE EE 1998
MCQ (Single Correct Answer)
+1
-0.3
One of the applications of current mirror is
A
Output current limiting
B
Obtaining a very high current gain
C
Current feedback
D
Temperature stabilized biasing
4
GATE EE 1996
MCQ (Single Correct Answer)
+1
-0.3
The depletion region (or) space charge region (or) transition region in a semiconductor $$p-n$$ junction diode has
A
electrons and holes
B
positive ions and electrons
C
positive and negative ions
D
negative ions and holes
GATE EE Subjects
Electromagnetic Fields
Signals and Systems
Engineering Mathematics
General Aptitude
Power Electronics
Power System Analysis
Analog Electronics
Control Systems
Digital Electronics
Electrical Machines
Electric Circuits
Electrical and Electronics Measurement