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Electronic Devices and VLSI
PN Junction
Marks 1Marks 2
Semiconductor Physics
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IC Basics and MOSFET
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BJT and FET
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1
GATE ECE 1997
MCQ (Single Correct Answer)
+1
-0.3
The units of $$\frac q{KT}$$ are
A
V
B
V-1
C
J
D
J/K
2
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The probability that an electron in a metal occupies the Fermi-level at any temperature (> 0 K)
A
$$0$$
B
1
C
0.5
D
1.0
3
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
In a P-type silicon sample, the hole concentration is $$2.25\times10^{15}/cm^3$$. If the intrinsic carrier concentration is $$1.5\times10^{15}/cm^3$$ , the electron concentration is
A
Zero
B
$$10^{10}/cm^3$$
C
$$10^{5}/cm^3$$
D
$$1.5\times10^{25}/cm^3$$
4
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The drift velocity of electrons in silicon
A
is proportional to the electric field for all values of electric field
B
is independent of the electric field
C
increases at low values of electric field and decreases at high values of electric field exhibiting negative differential resistance.
D
increases linearly with electric field at low values of electric field and gradually saturates at higher values of electric field.
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Questions Asked from Marks 1
GATE ECE 2025 (1) GATE ECE 2024 (2) GATE ECE 2023 (2) GATE ECE 2022 (2) GATE ECE 2017 Set 1 (1) GATE ECE 2016 Set 1 (1) GATE ECE 2015 Set 2 (2) GATE ECE 2015 Set 1 (1) GATE ECE 2014 Set 4 (2) GATE ECE 2014 Set 3 (2) GATE ECE 2011 (1) GATE ECE 2008 (1) GATE ECE 2006 (2) GATE ECE 2005 (3) GATE ECE 2004 (1) GATE ECE 2003 (1) GATE ECE 2002 (2) GATE ECE 1997 (1) GATE ECE 1995 (3) GATE ECE 1994 (2)
GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics