Analog Electronics
Diode Circuits and Applications
Marks 1Marks 2Marks 5
Frequency Response
Marks 2
Bjt and Mosfet Biasing
Marks 1Marks 2Marks 5
Feedback Amplifiers and Oscillator Circuits
Marks 1Marks 2Marks 5
Operational Amplifier
Marks 1Marks 2Marks 5
Small Signal Modeling
Marks 1Marks 2Marks 5
1
GATE EE 2014 Set 2
Numerical
+1
-0
The transistor in the given circuit should always be in active region. Take $${V_{CE\left( {sat} \right)}} = 0.2\,\,V,\,\,\,{V_{BE}} = 0.7\,\,V.\,\,\,$$ The maximum value of $${R_C}$$ in $$\Omega $$ which can be used, is __________. GATE EE 2014 Set 2 Analog Electronics - Bjt and Mosfet Biasing Question 28 English
Your input ____
2
GATE EE 2014 Set 1
MCQ (Single Correct Answer)
+1
-0.3
The magnitude of the mid-band voltage gain of the circuit shown in figure is (assuming $${h_{fe}}$$ of the transistor to be $$100$$) GATE EE 2014 Set 1 Analog Electronics - Bjt and Mosfet Biasing Question 29 English
A
$$1$$
B
$$10$$
C
$$20$$
D
$$100$$
3
GATE EE 2007
MCQ (Single Correct Answer)
+1
-0.3
The three terminal linear voltage regular is connected to a $$10\Omega $$ load resistor as shown in the figure. If $${V_{in}}$$ is $$10$$ $$V,$$ what is the power dissipated in the transistor GATE EE 2007 Analog Electronics - Bjt and Mosfet Biasing Question 7 English
A
$$0.6$$ $$W$$
B
$$4.2$$ $$W$$
C
$$2.4$$ $$W$$
D
$$5.4$$ $$W$$
4
GATE EE 2007
MCQ (Single Correct Answer)
+1
-0.3
The common emitter forward current gain of the transistor shown is $${\beta _p} = 100.$$ The transistor is operating in GATE EE 2007 Analog Electronics - Bjt and Mosfet Biasing Question 8 English
A
Saturation region
B
Cut-off region
C
Reverse active region
D
Forward active region
GATE EE Subjects
Electromagnetic Fields
Signals and Systems
Engineering Mathematics
General Aptitude
Power Electronics
Power System Analysis
Analog Electronics
Control Systems
Digital Electronics
Electrical Machines
Electric Circuits
Electrical and Electronics Measurement