Electronic Devices and VLSI
PN Junction
Marks 1Marks 2
Semiconductor Physics
Marks 1Marks 2
IC Basics and MOSFET
Marks 1Marks 2
BJT and FET
Marks 1Marks 2
1
GATE ECE 1998
MCQ (Single Correct Answer)
+1
-0.3
The static characteristic of an adequately forward biased p-n junction is a straight line, if the plot is of
A
log I vs. log V
B
log I vs. V
C
I vs. log V
D
I vs. V
2
GATE ECE 1998
MCQ (Single Correct Answer)
+1
-0.3
For small signal a.c. operation, a practical forward biased diode can be modeled as
A
a resistance and a capacitance in series
B
an ideal diode and resistance in parallel
C
a resistance and an ideal diode in series
D
a resistance
3
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The depletion capacitance, CJ, of an abrupt P-N junction with constant doping on either side varies with reverse bias, VR , as
A
CJ $$\propto$$ VR
B
CJ $$\propto$$ VR-1
C
CJ $$\propto$$ VR-1/2
D
CJ $$\propto$$ VR-1/3
4
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The diffusion potential across a P-N junction
A
decreases with increasing doping concentration
B
increases with decreasing band gap
C
does not depend on doping concentration
D
increases with increase in doping concentrations
GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics