Electronic Devices and VLSI
PN Junction
Marks 1Marks 2
Semiconductor Physics
Marks 1Marks 2
IC Basics and MOSFET
Marks 1Marks 2
BJT and FET
Marks 1Marks 2
1
GATE ECE 2016 Set 3
Numerical
+1
-0
The figure shows the I-V characteristics of a solar cell illuminated uniformly with solar light of power 100 mW/cm2. The solar cell has an area of 3 cm2 and a fill factor of 0.7. The maximum efficiency (in %) of the device is __________. GATE ECE 2016 Set 3 Electronic Devices and VLSI - BJT and FET Question 15 English
Your input ____
2
GATE ECE 2016 Set 2
MCQ (Single Correct Answer)
+1
-0.3
The Ebers-Moll model of a BJT is valid
A
only in active mode
B
only in active and saturation modes
C
only in active and cut-off modes
D
in active, saturation and cut-off modes
3
GATE ECE 2015 Set 3
MCQ (Single Correct Answer)
+1
-0.3
If the base width in a bipolar junction transistor is doubled, which one of the following statements will be TRUE?
A
Current gain will increase
B
Unity gain frequency will increase
C
Emitter base junction capacitance will increase
D
Early voltage will increase
4
GATE ECE 2015 Set 3
Numerical
+1
-0
In the circuit shown in the figure, the BJT has a current gain (β) of 50. For an emitter-base voltage VEB = 600 mV, the emitter-collector voltage VEC(in Volts) is ______.
Your input ____
GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics