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Electronic Devices and VLSI
PN Junction
Marks 1Marks 2
Semiconductor Physics
Marks 1Marks 2
IC Basics and MOSFET
Marks 1Marks 2
BJT and FET
Marks 1Marks 2
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1
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The Early-Effect in a bipolar junction transistor is caused by
A
Fast-turn-on.
B
Fast-turn-off.
C
Large collector-base reverse bias
D
Large emitter-base forward bias
2
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The Ebers-Moll model is applicable to
A
bipolar junction transistors
B
NMOS transistors
C
unipolar junction transistors
D
junction field-effect transistors
3
GATE ECE 1994
Fill in the Blanks
+1
-0
The transit time of the current carriers through the channel of an FET decides its ____________characteristics.
4
GATE ECE 1994
True or False
+1
-0
Channel current is reduced on application of a more positive voltage to the gate of a depletion mode n-channel MOSFET.
A
TRUE
B
FALSE
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Questions Asked from Marks 1
GATE ECE 2022 (1) GATE ECE 2017 Set 2 (2) GATE ECE 2017 Set 1 (1) GATE ECE 2016 Set 3 (1) GATE ECE 2016 Set 2 (1) GATE ECE 2015 Set 3 (2) GATE ECE 2014 Set 2 (1) GATE ECE 2011 (1) GATE ECE 2002 (1) GATE ECE 2001 (1) GATE ECE 1995 (4) GATE ECE 1994 (2)
GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics