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Electronic Devices and VLSI
PN Junction
Marks 1Marks 2
Semiconductor Physics
Marks 1Marks 2
IC Basics and MOSFET
Marks 1Marks 2
BJT and FET
Marks 1Marks 2
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1
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
The drain current of a MOSFET in saturation is given by $$I_D\;=\;K\left(V_{GS}\;-V_T\right)^2$$ where 'K' is a constant. The magnitude of the transconductance gm is
A
$$\frac{K\left(V_{GS}\;-\;V_T\right)^2}{V_{DS}}$$
B
$$2K\left(V_{GS}\;-\;V_T\right)$$
C
$$\frac{I_d}{V_{GS}\;-\;V_{DS}}$$
D
$$\frac{K\left(V_{GS}\;-\;V_T\right)^2}{V_{GS}}$$
2
GATE ECE 2005
MCQ (Single Correct Answer)
+1
-0.3
A MOS capacitor made using p-type substrate is in the accumulation mode. The dominant charge in the channel is due to the presence of
A
holes
B
electrons
C
positively charged ions
D
negatively charged ions
3
GATE ECE 2004
MCQ (Single Correct Answer)
+1
-0.3
Consider the following statements S1 and S2.


S1: The threshold voltage (VT) of a MOS capacitor decreases with increase in gate oxide thickness

S2: The threshold voltage (VT) of a MOS capacitor decreases with increase in substrate doping concentration.

Which one of the following is correct?
A
S1 is FALSE and S2 is TRUE
B
both S1 and S2 are TRUE
C
S1 is TRUE and S2 is FALSE
D
both S1 and S2 are FALSE
4
GATE ECE 1994
MCQ (Single Correct Answer)
+1
-0.3
The threshold voltage of an n-channel MOSFET can be increased by
A
increasing the channel dopant concentration
B
reducing the channel dopant concentration
C
reducing the gate-oxide thickness
D
reducing the channel length
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Questions Asked from Marks 1
GATE ECE 2023 (1) GATE ECE 2017 Set 2 (3) GATE ECE 2016 Set 2 (2) GATE ECE 2016 Set 1 (2) GATE ECE 2016 Set 3 (1) GATE ECE 2015 Set 3 (1) GATE ECE 2014 Set 3 (1) GATE ECE 2014 Set 2 (1) GATE ECE 2014 Set 1 (3) GATE ECE 2013 (2) GATE ECE 2012 (1) GATE ECE 2011 (1) GATE ECE 2008 (2) GATE ECE 2005 (1) GATE ECE 2004 (1) GATE ECE 1994 (1)
GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics