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Electronic Devices and VLSI
PN Junction
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Semiconductor Physics
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GATE ECE 1987
MCQ (Single Correct Answer)
+2
-0.6
The diffusion capacitance of a P-N junction
A
Decreases with increasing current and increasing temperature
B
Decreases with decreasing current and increasing temperature
C
Increases with increasing current and increasing temperature
D
Does not depend on current and temperature
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Questions Asked from Marks 2
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GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics