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Electronic Devices and VLSI
PN Junction
Marks 1Marks 2
Semiconductor Physics
Marks 1Marks 2
IC Basics and MOSFET
Marks 1Marks 2
BJT and FET
Marks 1Marks 2
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1
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The depletion capacitance, CJ, of an abrupt P-N junction with constant doping on either side varies with reverse bias, VR , as
A
CJ $$\propto$$ VR
B
CJ $$\propto$$ VR-1
C
CJ $$\propto$$ VR-1/2
D
CJ $$\propto$$ VR-1/3
2
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The diffusion potential across a P-N junction
A
decreases with increasing doping concentration
B
increases with decreasing band gap
C
does not depend on doping concentration
D
increases with increase in doping concentrations
3
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
A zener diode works on the principle of
A
tunneling of charge carriers across the junction
B
thermo ionic emission
C
diffusion of charge carriers across the junction
D
hopping of charge carriers across the junction
4
GATE ECE 1990
MCQ (Single Correct Answer)
+1
-0.3
In a junction diode
A
The depletion capacitance increases with increase in the reverse bias
B
The depletion capacitance decreases with increase in the reverse bias
C
The depletion capacitance increases with increase in the forward bias
D
The depletion capacitance is much higher than the depletion capacitance when it is forward bias.
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Questions Asked from Marks 1
GATE ECE 2015 Set 1 (2) GATE ECE 2014 Set 1 (1) GATE ECE 2013 (1) GATE ECE 2008 (2) GATE ECE 2007 (1) GATE ECE 2002 (1) GATE ECE 1998 (2) GATE ECE 1995 (3) GATE ECE 1990 (1)
GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics