1
GATE EE 2005
MCQ (Single Correct Answer)
+1
-0.3
The conduction loss versus device current characteristic of a power $$MOSFET$$ is best approximated by
2
GATE EE 2004
MCQ (Single Correct Answer)
+1
-0.3
A bipolar junction transistor $$(BJT)$$ is used as a power control switch by biasing it in the cut-off region (OFF state) or in the saturation region (ON state). In the ON state, for the $$BJT.$$
3
GATE EE 2004
MCQ (Single Correct Answer)
+1
-0.3
The triggering circuit of a thyristor is shown in figure. The thyristor requires a gate current of $$10$$ $$mA,$$ for guaranteed turn-on. The value of $$R$$ required for the thyristor to turn on reliably under all conditions of $${V_b}$$ variation is
4
GATE EE 2003
MCQ (Single Correct Answer)
+1
-0.3
Figure shows a thyristor with the standard terminations of anode $$(A),$$ cathode $$(K),$$ gate $$(G)$$ and the different junctions named $$J1, J2,$$ and $$J3$$. When the thyristor is turned on and conducting
Questions Asked from Marks 1
GATE EE 2024 (1) GATE EE 2023 (1) GATE EE 2022 (1) GATE EE 2018 (1) GATE EE 2017 Set 1 (1) GATE EE 2016 Set 1 (1) GATE EE 2014 Set 1 (1) GATE EE 2012 (1) GATE EE 2011 (1) GATE EE 2010 (1) GATE EE 2009 (1) GATE EE 2005 (1) GATE EE 2004 (2) GATE EE 2003 (2) GATE EE 1998 (3) GATE EE 1997 (1) GATE EE 1996 (3) GATE EE 1995 (1) GATE EE 1994 (2) GATE EE 1993 (1)
GATE EE Subjects
Electromagnetic Fields
Signals and Systems
Engineering Mathematics
General Aptitude
Power Electronics
Power System Analysis
Analog Electronics
Control Systems
Digital Electronics
Electrical Machines
Electric Circuits
Electrical and Electronics Measurement