The channel resistance of an N-channel JFET shown in the figure below is 600 W when the full channel thickness (t_ch) of 10 μm is available for conduction. The built-in voltage of the gate P⁺N junction (V_bi) is -1 V. When the gate to source voltage (V_GS) is 0 V, the channel is depleted by 1 μm on each side due to the built in voltage and hence the thickness available for conduction is only 8 μm The channel resistance when V_GS = 0 V is

In a uniformly doped BJT, assume that N_E, N_B and N_C are the emitter, base and collector dopings in atoms/cm³, respectively. If the emitter injection efficiency of the BJT is close unity, which one of the following conditions is TRUE?

The DC current gain ($$\beta$$) of a BJT is 50. Assuming that the emitter injection efficiency is 0.995, the base transport factor is:

An n-channel JEFT has I_DSS = 2 mA and V_p = −4 V. It's transconductance g_m (in mA/V) for an applied gate-to-source voltage V_GS of –2V is: