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Electronic Devices and VLSI
PN Junction
Marks 1Marks 2
Semiconductor Physics
Marks 1Marks 2
IC Basics and MOSFET
Marks 1Marks 2
BJT and FET
Marks 1Marks 2
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1
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The breakdown voltage of a transistor with its base open is BVCEO with emitter open is BVCBO, then
A
BVCEO = BVCBO
B
BVCEO > BVCBO
C
BVCEO < BVCBO
D
BVCEO is not related to BVCBO
2
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
A BJT is said to be operating in the saturation region if
A
both the junctions are reverse biased
B
base-emitter junction is reverse biased and base-collector junction is forward biased.
C
base-emitter junction is forward biased and base-collector junction reverse biased
D
both the junctions are forward biased
3
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The Early-Effect in a bipolar junction transistor is caused by
A
Fast-turn-on.
B
Fast-turn-off.
C
Large collector-base reverse bias
D
Large emitter-base forward bias
4
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The Ebers-Moll model is applicable to
A
bipolar junction transistors
B
NMOS transistors
C
unipolar junction transistors
D
junction field-effect transistors
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Questions Asked from Marks 1
GATE ECE 2022 (1) GATE ECE 2017 Set 2 (2) GATE ECE 2017 Set 1 (1) GATE ECE 2016 Set 3 (1) GATE ECE 2016 Set 2 (1) GATE ECE 2015 Set 3 (2) GATE ECE 2014 Set 2 (1) GATE ECE 2011 (1) GATE ECE 2002 (1) GATE ECE 2001 (1) GATE ECE 1995 (4) GATE ECE 1994 (2)
GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics