1
GATE ECE 2005
MCQ (Single Correct Answer)
+1
-0.3
The band gap of Silicon at room temperature is:
2
GATE ECE 2004
MCQ (Single Correct Answer)
+1
-0.3
The impurity commonly used for realizing the base region of a silicon n-p-n
transistor is
3
GATE ECE 2003
MCQ (Single Correct Answer)
+1
-0.3
n-type silicon is obtained by doping silicon with
4
GATE ECE 2002
MCQ (Single Correct Answer)
+1
-0.3
The intrinsic carrier concentration of silicon sample at 300oK is $$1.5\times10^{16}/m^3$$. If after doping, the number of majority carriers is $$5\times10^{20}/m^3$$ , minority carrier density is
Questions Asked from Marks 1
GATE ECE 2025 (1) GATE ECE 2024 (2) GATE ECE 2023 (2) GATE ECE 2022 (2) GATE ECE 2017 Set 1 (1) GATE ECE 2016 Set 1 (1) GATE ECE 2015 Set 2 (2) GATE ECE 2015 Set 1 (1) GATE ECE 2014 Set 4 (2) GATE ECE 2014 Set 3 (2) GATE ECE 2011 (1) GATE ECE 2008 (1) GATE ECE 2006 (2) GATE ECE 2005 (3) GATE ECE 2004 (1) GATE ECE 2003 (1) GATE ECE 2002 (2) GATE ECE 1997 (1) GATE ECE 1995 (3) GATE ECE 1994 (2)
GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics