GATE ECE 1988 | Bipolar Junction Transistor Question 72 | Analog Circuits

The amplifier circuit shown below uses a compostie transistor of a MOSFET and BIPOLAR in cascade. ALL capacitance are large. gm of the MOSFET = 2 mA/V , and h_fe of the BIPOLAR = 99. The overall Transconductance g_m of the composite transistor is GATE ECE 1988 Analog Circuits - Bipolar Junction Transistor Question 24 English

GATE ECE 1988 Analog Circuits - Bipolar Junction Transistor Question 24 English

198 mA/V.

9.9 mA/V.

4.95 mA/V.

1.98 mA/V.

GATE ECE 1988

MCQ (Single Correct Answer)

-0.6

Each transistor in the Darlington pair (see Fig. below) has h_fe = 100. The overall h_fe of the composite transistor neglecting the leakage current is GATE ECE 1988 Analog Circuits - Bipolar Junction Transistor Question 49 English

GATE ECE 1988 Analog Circuits - Bipolar Junction Transistor Question 49 English

1000

10001

10100

10200

GATE ECE 1988

MCQ (Single Correct Answer)

-0.6

The quiescent collector current I_c, of a transistor is increased by changing resistance. As a result

g_m will not be affected

g_m will decrease

g_m will increase

g_m will increase or decrease depending upon bias stability.

GATE ECE Subjects

Signals and Systems

Network Theory

Control Systems

Digital Circuits

General Aptitude

Electronic Devices and VLSI

Analog Circuits

Engineering Mathematics

Microprocessors

Communications

Electromagnetics