ExamSIDE
Questions (Powered by ExamGOAL)
Analog Circuits
Bipolar Junction Transistor
Marks 1Marks 2Marks 5
FET and MOSFET
Marks 1Marks 2Marks 5Marks 8
Oscillators
Marks 1Marks 2Marks 5
Operational Amplifier
Marks 1Marks 2Marks 5Marks 8
555 Timer
Marks 1Marks 2Marks 5
Frequency Response
Marks 1Marks 2Marks 5
Diodes
Marks 1Marks 2
Feedback Amplifier
Marks 1Marks 2
Power Amplifier
Marks 1Marks 2
Previous
1
GATE ECE 2022
MCQ (Single Correct Answer)
+1
-0.33

The ideal long channel nMOSFET and pMOSFET devices shown in the circuits have threshold voltages of 1 V and $$-$$1 V, respectively. The MOSFET substrates are connected to their respectively sources. Ignore leakage currents and assume that the capacitors are initially discharged. For the applied voltages as shown, the steady state voltages are ____________.

GATE ECE 2022 Analog Circuits - FET and MOSFET Question 10 English

A
V1 = 5 V, V2 = 5 V
B
V1 = 5 V, V2 = 4 V
C
V1 = 4 V, V2 = 5 V
D
V1 = 4 V, V2 = $$-$$5 V
2
GATE ECE 1998
MCQ (Single Correct Answer)
+1
-0.3
In the MOSFET amplifier of the figure the signal output V1 and V2 obey the relationship GATE ECE 1998 Analog Circuits - FET and MOSFET Question 25 English
A
$${V_1} = {{{V_2}} \over 2}$$
B
$${V_1} =- {{{V_2}} \over 2}$$
C
$${V_1} = 2{V_2}$$
D
$${V_1} =- 2{V_2}$$
3
GATE ECE 1995
Fill in the Blanks
+1
-0
An n-channel JFET has IDSS = 1 mA and Vp = -5 V. Its maximum transconductance is ______
4
GATE ECE 1994
Fill in the Blanks
+1
-0
The transit time of a current carriers through the channel of an FET decides its ____________characteristics.
Previous
Questions Asked from Marks 1
GATE ECE 2025 (1) GATE ECE 2024 (1) GATE ECE 2023 (1) GATE ECE 2022 (2) GATE ECE 1998 (1) GATE ECE 1995 (1) GATE ECE 1994 (1)
GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics