1
GATE ECE 2023
Numerical
+2
-0
In a semiconductor device, the Fermi-energy level is 0.35 eV above the valence band energy. The effective density of states in the valence band at T = 300 K is 1 $$\times$$ 10$$^{19}$$ cm$$^{-3}$$. The thermal equilibrium hole concentration in silicon at 400 K is _____________ $$\times$$ 10$$^{13}$$ cm$$^{-3}$$ (rounded off to two decimal places).
Given kT at 300 K is 0.026 eV.
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2
GATE ECE 2022
MCQ (More than One Correct Answer)
+2
-0
Select the CORRECT statements regarding semiconductor devices
3
GATE ECE 2017 Set 1
Numerical
+2
-0
The dependence of drift velocity of electrons on electric field in a semiconductor is shown
below. The semiconductor has a uniform electron concentration of n = 1x1016 $$cm^{-3}$$ and electronic charge q = 1.6x10-19 C. If a bias of 5V is applied across a 1 $$\mu$$m region of this
semiconductor, the resulting current density in this region, in kA/cm2, is _________.
Your input ____
4
GATE ECE 2015 Set 2
Numerical
+2
-0
A dc voltage of 10V is applied across an n–type silicon bar having a rectangular cross–section
and a length of 1cm as shown in figure. The donor doping concentration ND and the mobility of electrons $$\mu$$n are $$10^{16}$$ cm-3 and 1000 cm2 V-1s-1, respectively. The average time (in $$\mu$$s)
taken by the electrons to move from one end of the bar to other end is _______________.
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Questions Asked from Marks 2
GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics