Consider the circuit shown with an ideal long channel nMOSFET (enhancement mode, substrate is connected to the source). The transistor is appropriately biased in the saturation region with V_GG and V_DD such that it acts as a linear amplifier. v_i is the small-signal ac input voltage. v_A and v_B represent the small-signal voltages at the nodes A and B, respectively. The value of $${{{v_A}} \over {{v_B}}}$$ is __________ (rounded off to one decimal place).

The ac schematic of an NMOS common-source stage is shown in the figure below, where part of the biasing circuits has been omitted for simplicity. For the n -channel MOSFET M, the transconductance g_m = 1 mA/V, and body effect and channel length modulation effect are to be neglected. The lower cutoff frequency in Hz of the circuit is approximately at

An n-channel depletion MOSFET has following two points on its I_D - V_GS curve:

(i)V_GS = 0 at I_d = 12 mA and
(ii)V_GS = -6 Volts at Z_o =$$\infty $$

Which of the following Q-points will give the highest transconductance gain for small signals?

Given
$${r_d} = 20K\Omega ,\,\,{I_{DSS}}\, = \,10mA,\,\,{V_P} = - 8V$$

Transconductance in milli-Siemens (mS) and voltage gain of the amplifier are respectively.