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Electronic Devices and VLSI
PN Junction
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IC Basics and MOSFET
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1
GATE ECE 2024
Numerical
+2
-0

Consider a MOS capacitor made with p-type silicon. It has an oxide thickness of 100 nm, a fixed positive oxide charge of $10^{-8}$ C/cm2 at the oxide-silicon interface, and a metal work function of 4.6 eV. Assume that the relative permittivity of the oxide is 4 and the absolute permittivity of free space is $8.85 × 10^{-14}$ F/cm. If the flatband voltage is 0 V, the work function of the p-type silicon (in eV, rounded off to two decimal places) is ______.

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2
GATE ECE 2023
Numerical
+2
-0

In the circuit below, the voltage V$$_{\mathrm{L}}$$ is _____________ V (rounded off to two decimal places).

GATE ECE 2023 Electronic Devices and VLSI - IC Basics and MOSFET Question 3 English

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3
GATE ECE 2017 Set 2
MCQ (Single Correct Answer)
+2
-0.6
Assuming that transistor M1 and M2 are identical and have a threshold voltage of 1V, the state of transistors M1 and M2 are respectively GATE ECE 2017 Set 2 Electronic Devices and VLSI - IC Basics and MOSFET Question 5 English
A
Saturation, Saturation
B
Linear, Linear
C
Linear, Saturation
D
Saturation, Linear
4
GATE ECE 2017 Set 2
MCQ (Single Correct Answer)
+2
-0.6
Two n-channel MOSFETs, T1 and T2, are identical in all respects except that the width of T2 is double of T1. Both the transistor are biased in the saturation region of operation, but the gate overdrive voltage (VGS - VTH) of T2 is double that of T1, where VGS and VTH are the gate-to-source voltage and threshold voltage of the transistors, respectively. If the drain current and transconductance of T1 are ID1 and gm1 respectively ; the corresponding values of these two parameters for T2 are
A
8ID1 and 2gm1
B
8ID1 and 4gm1
C
4ID1 and 4gm1
D
4ID1 and 2gm1
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Questions Asked from Marks 2
GATE ECE 2024 (1) GATE ECE 2023 (1) GATE ECE 2017 Set 2 (3) GATE ECE 2017 Set 1 (1) GATE ECE 2016 Set 3 (3) GATE ECE 2016 Set 2 (2) GATE ECE 2016 Set 1 (1) GATE ECE 2015 Set 2 (1) GATE ECE 2015 Set 3 (2) GATE ECE 2015 Set 1 (2) GATE ECE 2014 Set 1 (1) GATE ECE 2014 Set 3 (3) GATE ECE 2014 Set 2 (2) GATE ECE 2013 (1) GATE ECE 2012 (4) GATE ECE 2009 (2) GATE ECE 2008 (3) GATE ECE 2007 (1) GATE ECE 2006 (1) GATE ECE 2004 (1) GATE ECE 2003 (3)
GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics