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Electronic Devices and VLSI
PN Junction
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Semiconductor Physics
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IC Basics and MOSFET
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BJT and FET
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1
GATE ECE 2015 Set 1
Numerical
+1
-0
In the circuit shown below, the Zener diode is ideal and the Zener voltage is 6V. The output voltage V0 (in volts) is ________. GATE ECE 2015 Set 1 Electronic Devices and VLSI - PN Junction Question 22 English
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2
GATE ECE 2015 Set 1
MCQ (Single Correct Answer)
+1
-0.3
A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction if
A
Both the P-region and the N-region are heavily doped
B
The N-region is heavily doped compared to the P-region
C
The P-region is heavily doped compared to the N-region
D
An intrinsic silicon region is inserted between the P-region and the N-region
3
GATE ECE 2014 Set 1
Numerical
+1
-0
When the optical power incident on a photodiode is 10μW and the responsivity is 0.8 A/W, the photocurrent generated (in μA) is ________.
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4
GATE ECE 2013
MCQ (Single Correct Answer)
+1
-0.3
In a forward biased P-N junction diode, the sequence of events that best describes the mechanism of current flow is
A
injection, and subsequent diffusion and recombination of minority carriers
B
injection, and subsequent drift and generation of minority carriers
C
extraction, and subsequent diffusion and generation of minority carriers
D
extraction, and subsequent drift and recombination of minority carriers
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Questions Asked from Marks 1
GATE ECE 2015 Set 1 (2) GATE ECE 2014 Set 1 (1) GATE ECE 2013 (1) GATE ECE 2008 (2) GATE ECE 2007 (1) GATE ECE 2002 (1) GATE ECE 1998 (2) GATE ECE 1995 (3) GATE ECE 1990 (1)
GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics