1
GATE ECE 2014 Set 3
MCQ (Single Correct Answer)
+1
-0.3
In MOSFET fabrication, the channel length is defined during the process of
2
GATE ECE 2014 Set 2
MCQ (Single Correct Answer)
+1
-0.3
In CMOS technology, shallow P-well or N-well regions can be formed using
3
GATE ECE 2013
MCQ (Single Correct Answer)
+1
-0.3
In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation
(using steam or water vapor) produces
4
GATE ECE 2013
MCQ (Single Correct Answer)
+1
-0.3
In a MOSFET operating in the saturation region, the channel length modulation
effect causes
Questions Asked from Marks 1
GATE ECE 2023 (1) GATE ECE 2017 Set 2 (3) GATE ECE 2016 Set 3 (1) GATE ECE 2016 Set 2 (2) GATE ECE 2016 Set 1 (2) GATE ECE 2015 Set 3 (1) GATE ECE 2014 Set 1 (3) GATE ECE 2014 Set 3 (1) GATE ECE 2014 Set 2 (1) GATE ECE 2013 (2) GATE ECE 2012 (1) GATE ECE 2011 (1) GATE ECE 2008 (2) GATE ECE 2005 (1) GATE ECE 2004 (1) GATE ECE 1994 (1)
GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics