GATE ECE 2013 | IC Basics and MOSFET Question 40 | Electronic Devices and VLSI

Electronic Devices and VLSI

PN Junction

Marks 1 Marks 2

Semiconductor Physics

IC Basics and MOSFET

BJT and FET

GATE ECE 2013

MCQ (Single Correct Answer)

-0.3

In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces

superior quality oxide with a higher growth rate

inferior quality oxide with a higher growth rate

inferior quality oxide with a lower growth rate

superior quality oxide with a lower growth rate

GATE ECE 2013

MCQ (Single Correct Answer)

-0.3

In a MOSFET operating in the saturation region, the channel length modulation effect causes

an increase in the gate-source capacitance

a decrease in the Transconductance

a decrease in the unity-gain cutoff frequency

a decrease in the output resistance

GATE ECE 2012

MCQ (Single Correct Answer)

-0.3

In the circuit shown GATE ECE 2012 Electronic Devices and VLSI - IC Basics and MOSFET Question 59 English

$$Y=\overline A\;\overline B\;+\;\overline C$$

$$Y=\left(A+B\right)C$$

$$Y=\left(\overline A+\overline B\right)\overline C$$

$$Y=AB+C$$

GATE ECE 2011

MCQ (Single Correct Answer)

-0.3

In the circuit shown below, for the MOS transistors, $$\mu_nC_{ox}\;=\;100\;\mu A/V^2$$ and the threshold voltage V_T = 1 V. The voltage V_x at the source of the upper transistor is GATE ECE 2011 Electronic Devices and VLSI - IC Basics and MOSFET Question 60 English