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Electronic Devices and VLSI
PN Junction
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Semiconductor Physics
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IC Basics and MOSFET
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BJT and FET
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1
GATE ECE 2010
MCQ (Single Correct Answer)
+2
-0.6
In a uniformly doped BJT, assume that NE, NB and NC are the emitter, base and collector dopings in atoms/cm3, respectively. If the emitter injection efficiency of the BJT is close unity, which one of the following conditions is TRUE?
A
NE = NB = NC
B
NE $$\gg$$ NB and NB > NC
C
NE = NB and NB < NC
D
NE < NB < NC
2
GATE ECE 2007
MCQ (Single Correct Answer)
+2
-0.6
The DC current gain ($$\beta$$) of a BJT is 50. Assuming that the emitter injection efficiency is 0.995, the base transport factor is:
A
0.980
B
0.985
C
0.990
D
0.995
3
GATE ECE 1999
MCQ (Single Correct Answer)
+2
-0.6
An n-channel JEFT has IDSS = 2 mA and Vp = −4 V. It's transconductance gm (in mA/V) for an applied gate-to-source voltage VGS of –2V is:
A
0.25
B
0.5
C
0.75
D
1.0
4
GATE ECE 1992
MCQ (Single Correct Answer)
+2
-0.6
An n-channel JFET has a pinch-off voltage VP = -5 V, VDS(max) = 20 V and gm = 2 mA/V. The minimum ‘ON’ resistance is achieved in the JEFT for
A
VGS = - 7 V and VDS = 0 V
B
VGS = 0 V and VDS = 0 V
C
VGS = 0 V and VDS = 20 V
D
VGS = - 7 V and VDS = 20 V
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Questions Asked from Marks 2
GATE ECE 2016 Set 3 (1) GATE ECE 2015 Set 3 (1) GATE ECE 2014 Set 4 (1) GATE ECE 2011 (2) GATE ECE 2010 (1) GATE ECE 2007 (1) GATE ECE 1999 (1) GATE ECE 1992 (2)
GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics