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Electronic Devices and VLSI
PN Junction
Marks 1Marks 2
Semiconductor Physics
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IC Basics and MOSFET
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BJT and FET
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1
GATE ECE 2007
MCQ (Single Correct Answer)
+1
-0.3
In a p+n junction diode under reverse bias, the magnitude of electric field is maximum at
A
the edge of the depletion region on the p-side
B
the edge of the depletion region on the n-side
C
the p+n junction
D
the center of the depletion region on the n-side
2
GATE ECE 2002
MCQ (Single Correct Answer)
+1
-0.3
In the figure, a silicon diode is carrying a constant current of 1 mA. When the temperature of the diode is 20°C, VD is found to be 700 mV. If the temperature rises to 40°C, VD becomes approximately equal to GATE ECE 2002 Electronic Devices and VLSI - PN Junction Question 29 English
A
740 mV
B
660 mV
C
680 mV
D
700 mV
3
GATE ECE 1998
MCQ (Single Correct Answer)
+1
-0.3
The static characteristic of an adequately forward biased p-n junction is a straight line, if the plot is of
A
log I vs. log V
B
log I vs. V
C
I vs. log V
D
I vs. V
4
GATE ECE 1998
MCQ (Single Correct Answer)
+1
-0.3
For small signal a.c. operation, a practical forward biased diode can be modeled as
A
a resistance and a capacitance in series
B
an ideal diode and resistance in parallel
C
a resistance and an ideal diode in series
D
a resistance
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Questions Asked from Marks 1
GATE ECE 2015 Set 1 (2) GATE ECE 2014 Set 1 (1) GATE ECE 2013 (1) GATE ECE 2008 (2) GATE ECE 2007 (1) GATE ECE 2002 (1) GATE ECE 1998 (2) GATE ECE 1995 (3) GATE ECE 1990 (1)
GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics