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Electronic Devices and VLSI
PN Junction
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Semiconductor Physics
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IC Basics and MOSFET
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BJT and FET
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1
GATE ECE 2013
MCQ (Single Correct Answer)
+1
-0.3
In a forward biased P-N junction diode, the sequence of events that best describes the mechanism of current flow is
A
injection, and subsequent diffusion and recombination of minority carriers
B
injection, and subsequent drift and generation of minority carriers
C
extraction, and subsequent diffusion and generation of minority carriers
D
extraction, and subsequent drift and recombination of minority carriers
2
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
In the following limiter circuit, an input voltage $${\mathrm V}_\mathrm i\;=\;10\sin\left(100\mathrm{Ï€t}\right)$$ applied. Assume that the diode drop is 0.7V when it is forward biased. The Zener breakdown voltage is 6.8V. GATE ECE 2008 Electronic Devices and VLSI - PN Junction Question 27 English

The maximum and minimum values of the output voltage respectively are

A
6.1V, − 0.7V
B
0.7V, − 7.5V
C
7.5V, − 0.7V
D
7.5V, − 7.5V
3
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
Which of the following is NOT associated with a P-N junction?
A
Junction capacitance
B
Charge Storage Capacitance
C
Depletion Capacitance
D
Channel Length Modulation
4
GATE ECE 2007
MCQ (Single Correct Answer)
+1
-0.3
In a p+n junction diode under reverse bias, the magnitude of electric field is maximum at
A
the edge of the depletion region on the p-side
B
the edge of the depletion region on the n-side
C
the p+n junction
D
the center of the depletion region on the n-side
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Questions Asked from Marks 1
GATE ECE 2015 Set 1 (2) GATE ECE 2014 Set 1 (1) GATE ECE 2013 (1) GATE ECE 2008 (2) GATE ECE 2007 (1) GATE ECE 2002 (1) GATE ECE 1998 (2) GATE ECE 1995 (3) GATE ECE 1990 (1)
GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics