ExamSIDE
Questions (Powered by ExamGOAL)
Electronic Devices and VLSI
PN Junction
Marks 1Marks 2
Semiconductor Physics
Marks 1Marks 2
IC Basics and MOSFET
Marks 1Marks 2
BJT and FET
Marks 1Marks 2
Previous Next
1
GATE ECE 2002
MCQ (Single Correct Answer)
+1
-0.3
If the transistor in Figure is in saturation, then GATE ECE 2002 Electronic Devices and VLSI - BJT and FET Question 21 English
A
IC is always equal to bdcIB
B
IC is always equal to -bdcIB
C
IC is greater than or equal to bdcIB
D
IC is less than bdcIB
2
GATE ECE 2001
MCQ (Single Correct Answer)
+1
-0.3
MOSFET can be used as a
A
Current controlled capacitor
B
Voltage controlled capacitor
C
Current controlled inductor
D
Voltage controlled inductor
3
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The breakdown voltage of a transistor with its base open is BVCEO with emitter open is BVCBO, then
A
BVCEO = BVCBO
B
BVCEO > BVCBO
C
BVCEO < BVCBO
D
BVCEO is not related to BVCBO
4
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
A BJT is said to be operating in the saturation region if
A
both the junctions are reverse biased
B
base-emitter junction is reverse biased and base-collector junction is forward biased.
C
base-emitter junction is forward biased and base-collector junction reverse biased
D
both the junctions are forward biased
Previous Next
Questions Asked from Marks 1
GATE ECE 2022 (1) GATE ECE 2017 Set 2 (2) GATE ECE 2017 Set 1 (1) GATE ECE 2016 Set 3 (1) GATE ECE 2016 Set 2 (1) GATE ECE 2015 Set 3 (2) GATE ECE 2014 Set 2 (1) GATE ECE 2011 (1) GATE ECE 2002 (1) GATE ECE 2001 (1) GATE ECE 1995 (4) GATE ECE 1994 (2)
GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics