1
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
If P is Passivation, Q is n-well implant, R is metallization and S is source/drain
diffusion, then the order in which they are carried out in a standard n-well CMOS
fabrication process, is
2
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
For an n-channel enhancement type MOSFET, if the source is connected at a
higher potential than that of the bulk (i.e. VSB > 0), the threshold voltage VT of
the MOSFET will
3
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
When the gate-to-source voltage (VGS) of a MOSFET with threshold voltage of
400 mV, working in saturation is 900 mV, the drain current is observed to be 1
mA. Neglecting the channel width modulation effect and assuming that the
MOSFET is operating at saturation, the drain current for an applied VGS of 1400
mV is
Questions Asked from Marks 2
GATE ECE 2024 (1) GATE ECE 2023 (1) GATE ECE 2017 Set 2 (3) GATE ECE 2017 Set 1 (1) GATE ECE 2016 Set 3 (3) GATE ECE 2016 Set 2 (2) GATE ECE 2016 Set 1 (1) GATE ECE 2015 Set 2 (1) GATE ECE 2015 Set 3 (2) GATE ECE 2015 Set 1 (2) GATE ECE 2014 Set 1 (1) GATE ECE 2014 Set 3 (3) GATE ECE 2014 Set 2 (2) GATE ECE 2013 (1) GATE ECE 2012 (4) GATE ECE 2009 (2) GATE ECE 2008 (3) GATE ECE 2007 (1) GATE ECE 2006 (1) GATE ECE 2004 (1) GATE ECE 2003 (3)
GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics