Electronic Devices and VLSI
PN Junction
Marks 1Marks 2
Semiconductor Physics
Marks 1Marks 2
IC Basics and MOSFET
Marks 1Marks 2
BJT and FET
Marks 1Marks 2
1
GATE ECE 2014 Set 1
MCQ (Single Correct Answer)
+1
-0.3
If fixed positive charges are present in the gate oxide of an n-channel enhancement type MOSFET, it will lead to
A
a decrease in the threshold voltage
B
channel length modulation
C
an increase in substrate leakage current
D
an increase in accumulation capacitance
2
GATE ECE 2014 Set 1
MCQ (Single Correct Answer)
+1
-0.3
In the ac equivalent circuit shown in the figure, if in is the input current and RF is very large, the type of feedback GATE ECE 2014 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 55 English
A
voltage-voltage feedback
B
voltage-current feedback
C
current-voltage feedback
D
current-current feedback
3
GATE ECE 2014 Set 1
MCQ (Single Correct Answer)
+1
-0.3
In the following circuit employing pass transistor logic, all NMOS transistors are identical with a threshold voltage of 1 V. Ignoring the body-effect, the output voltages at P, Q and R are, GATE ECE 2014 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 54 English
A
4 V, 3 V, 2 V
B
5 V, 5 V, 5 V
C
4 V, 4 V, 4 V
D
5 V, 4 V, 3 V
4
GATE ECE 2013
MCQ (Single Correct Answer)
+1
-0.3
In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces
A
superior quality oxide with a higher growth rate
B
inferior quality oxide with a higher growth rate
C
inferior quality oxide with a lower growth rate
D
superior quality oxide with a lower growth rate
GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics