Analog Circuits
1
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
Given
$${r_d} = 20K\Omega ,\,\,{I_{DSS}}\, = \,10mA,\,\,{V_P} = - 8V$$
$${r_d} = 20K\Omega ,\,\,{I_{DSS}}\, = \,10mA,\,\,{V_P} = - 8V$$
ID and VDS under DC conditions are respectively
2
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
Given
$${r_d} = 20K\Omega ,\,\,{I_{DSS}}\, = \,10mA,\,\,{V_P} = - 8V$$
$${r_d} = 20K\Omega ,\,\,{I_{DSS}}\, = \,10mA,\,\,{V_P} = - 8V$$
Transconductance in milli-Siemens (mS) and voltage gain of the amplifier are respectively.
3
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
The action of a JFET in its equivalent circuit can be best represented as a
4
GATE ECE 2002
MCQ (Single Correct Answer)
+2
-0.6
Consider the following statements in connection with the CMOS inverter in the Figure.
Where both the MOSFETS are of enhancement type and both have a threshold voltage of 2V.
Statement 1: T1 conducts when Vi $$ \ge \,2\,V$$.
Statement 2: T1 is always in saturation when $${V_0}\, = \,0\,V$$.
Which of the following is correct?
GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics