GATE ECE 2014 Set 1 | Bipolar Junction Transistor Question 19 | Analog Circuits

For the amplifier shown in the figure, the BJT parameters are V_BE = 0.7 V, $$\beta $$ = 200, and thermal voltage V_T = 25 mV. The voltage gain (V_o/V_i of the amplifier is ______. GATE ECE 2014 Set 1 Analog Circuits - Bipolar Junction Transistor Question 25 English

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GATE ECE 2014 Set 1

Numerical

-0

A BJT is baised in forward active mode Assume V_BE = 0.7 V, kT/q = 25 mV and reverse saturation current I_s = 10^-13A. The transconductance of the BJT (in mA/V) is

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GATE ECE 2013

MCQ (Single Correct Answer)

-0.6

In the circuit shown below, the silicon npn transistor Q has a very high value of $$\beta $$. The required value of R₂ in k$$\Omega $$ to produce I_c = 1mA is GATE ECE 2013 Analog Circuits - Bipolar Junction Transistor Question 27 English

GATE ECE 2013 Analog Circuits - Bipolar Junction Transistor Question 27 English

GATE ECE 2012

MCQ (Single Correct Answer)

-0.6

The voltage gain A_v of the circuit shown below is GATE ECE 2012 Analog Circuits - Bipolar Junction Transistor Question 28 English

$$\left| {{{\rm A}_v}} \right|\, \approx \,200$$

$$\left| {{{\rm A}_v}} \right|\, \approx \,100$$

$$\left| {{{\rm A}_v}} \right|\, \approx \,20$$

$$\left| {{{\rm A}_v}} \right|\, \approx \,10$$

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GATE ECE Subjects

Signals and Systems

Network Theory

Control Systems

Digital Circuits

General Aptitude

Electronic Devices and VLSI

Analog Circuits

Engineering Mathematics

Microprocessors

Communications

Electromagnetics