GATE ECE 2011 | Semiconductor Physics Question 28 | Electronic Devices and VLSI

Electronic Devices and VLSI

PN Junction

Marks 1 Marks 2

Semiconductor Physics

IC Basics and MOSFET

BJT and FET

GATE ECE 2011

MCQ (Single Correct Answer)

-0.3

Drift current in the semiconductors depends upon

only the electric field

only the carrier concentration gradient

both the electric field and the carrier concentration

both the electric field and the carrier concentration gradient

GATE ECE 2008

MCQ (Single Correct Answer)

-0.3

Which of the following is true?

A silicon wafer heavily doped with boron is a p⁺ substrate

A silicon wafer lightly doped with boron is a p⁺ substrate

A silicon wafer heavily doped with arsenic is a p⁺ substrate

A silicon wafer lightly doped with arsenic is a p⁺ substrate

GATE ECE 2006

MCQ (Single Correct Answer)

-0.3

Under low level injection assumption, the injected minority carrier current for an extrinsic semiconductor is essentially the

diffusion current

drift current

recombination current

induced current

GATE ECE 2006

MCQ (Single Correct Answer)

-0.3

The concentration of minority carriers in an extrinsic semiconductor under equilibrium is:

directly proportional to the doping concentration

inversely proportional to the doping concentration

directly proportional to the intrinsic concentration

inversely proportional to the intrinsic concentration

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GATE ECE Subjects

Signals and Systems

Network Theory

Control Systems

Digital Circuits

General Aptitude

Electronic Devices and VLSI

Analog Circuits

Engineering Mathematics

Microprocessors

Communications

Electromagnetics