GATE ECE 2003 | PN Junction Question 22 | Electronic Devices and VLSI

Electronic Devices and VLSI

PN Junction

Marks 1 Marks 2

Semiconductor Physics

IC Basics and MOSFET

BJT and FET

GATE ECE 2003

MCQ (Single Correct Answer)

-0.6

Choose proper substitutes for X and Y to make the following statement correct Tunnel diode and Avalanche photodiode are operated in X bias and Y bias respectively.

X: reverse, Y: reverse

X: reverse, Y: forward

X: forward, Y: reverse

X: forward, Y: forward

GATE ECE 2003

MCQ (Single Correct Answer)

-0.6

At 300 K, for a diode current of 1 mA, a certain germanium diode requires a forward bias of 0.1435 V. Where as a certain silicon diode requires a forward bias of 0.718 V. Under the conditions stated above, the closest approximation of the ratio of reverse saturation current in germanium diode to that in silicon diode is

4 × 10³

8 × 10³

GATE ECE 1993

MCQ (More than One Correct Answer)

-0

The built-in potential (Diffusion Potential) in a p-n junction

is equal to the difference in the Fermi level of the two sides, expressed in volts.

increases with the increase in the doping levels of the two sides.

increases with the increase in temperature.

is equal to the average of the Fermi levels of the two sides.

GATE ECE 1992

MCQ (Single Correct Answer)

-0.6

The 6 V Zener diode shown in figure has zero Zener resistance and a knee current of 5 mA. The minimum value of R, so that the voltage across it does not fall below 6 V is: GATE ECE 1992 Electronic Devices and VLSI - PN Junction Question 18 English