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Electronic Devices and VLSI
PN Junction
Marks 1Marks 2
Semiconductor Physics
Marks 1Marks 2
IC Basics and MOSFET
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BJT and FET
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1
GATE ECE 2014 Set 2
MCQ (Single Correct Answer)
+1
-0.3
An increase in the base recombination of a BJT will increase
A
the common emitter dc current gain $$\beta$$
B
the breakdown voltage BVCEO
C
the unity-gain cut-off frequency fT
D
the transconductance gm
2
GATE ECE 2011
MCQ (Single Correct Answer)
+1
-0.3
For a BJT the common base current gain $$\alpha$$ = 0.98 and the collector base junction reverse bias saturation current ICO = 0.6μA. This BJT is connected in the common emitter mode and operated in the active region with a base drive current IB=20μA. The collector current IC for this mode of operation is
A
0.98mA
B
0.99mA
C
1.0mA
D
1.01mA
3
GATE ECE 2002
MCQ (Single Correct Answer)
+1
-0.3
If the transistor in Figure is in saturation, then GATE ECE 2002 Electronic Devices and VLSI - BJT and FET Question 21 English
A
IC is always equal to bdcIB
B
IC is always equal to -bdcIB
C
IC is greater than or equal to bdcIB
D
IC is less than bdcIB
4
GATE ECE 2001
MCQ (Single Correct Answer)
+1
-0.3
MOSFET can be used as a
A
Current controlled capacitor
B
Voltage controlled capacitor
C
Current controlled inductor
D
Voltage controlled inductor
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Questions Asked from Marks 1
GATE ECE 2022 (1) GATE ECE 2017 Set 2 (2) GATE ECE 2017 Set 1 (1) GATE ECE 2016 Set 3 (1) GATE ECE 2016 Set 2 (1) GATE ECE 2015 Set 3 (2) GATE ECE 2014 Set 2 (1) GATE ECE 2011 (1) GATE ECE 2002 (1) GATE ECE 2001 (1) GATE ECE 1995 (4) GATE ECE 1994 (2)
GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics