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Electronic Devices and VLSI
PN Junction
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Semiconductor Physics
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IC Basics and MOSFET
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BJT and FET
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1
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
A silicon wafer has 100 mm of oxide on it and is inserted in a furnace at a temperature above 1000ºC for further oxidation in dry oxygen. The oxidation rate
A
is independent of current oxide thickness and temperature
B
is independent of current oxide thickness but depends on temperature
C
slows down as the oxide grows
D
is zero as the existing oxide prevents further oxidation
2
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
The drain current of a MOSFET in saturation is given by $$I_D\;=\;K\left(V_{GS}\;-V_T\right)^2$$ where 'K' is a constant. The magnitude of the transconductance gm is
A
$$\frac{K\left(V_{GS}\;-\;V_T\right)^2}{V_{DS}}$$
B
$$2K\left(V_{GS}\;-\;V_T\right)$$
C
$$\frac{I_d}{V_{GS}\;-\;V_{DS}}$$
D
$$\frac{K\left(V_{GS}\;-\;V_T\right)^2}{V_{GS}}$$
3
GATE ECE 2005
MCQ (Single Correct Answer)
+1
-0.3
A MOS capacitor made using p-type substrate is in the accumulation mode. The dominant charge in the channel is due to the presence of
A
holes
B
electrons
C
positively charged ions
D
negatively charged ions
4
GATE ECE 2004
MCQ (Single Correct Answer)
+1
-0.3
Consider the following statements S1 and S2.


S1: The threshold voltage (VT) of a MOS capacitor decreases with increase in gate oxide thickness

S2: The threshold voltage (VT) of a MOS capacitor decreases with increase in substrate doping concentration.

Which one of the following is correct?
A
S1 is FALSE and S2 is TRUE
B
both S1 and S2 are TRUE
C
S1 is TRUE and S2 is FALSE
D
both S1 and S2 are FALSE
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Questions Asked from Marks 1
GATE ECE 2023 (1) GATE ECE 2017 Set 2 (3) GATE ECE 2016 Set 3 (1) GATE ECE 2016 Set 2 (2) GATE ECE 2016 Set 1 (2) GATE ECE 2015 Set 3 (1) GATE ECE 2014 Set 1 (3) GATE ECE 2014 Set 3 (1) GATE ECE 2014 Set 2 (1) GATE ECE 2013 (2) GATE ECE 2012 (1) GATE ECE 2011 (1) GATE ECE 2008 (2) GATE ECE 2005 (1) GATE ECE 2004 (1) GATE ECE 1994 (1)
GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics