Electronic Devices and VLSI
PN Junction
Marks 1Marks 2
Semiconductor Physics
Marks 1Marks 2
IC Basics and MOSFET
Marks 1Marks 2
BJT and FET
Marks 1Marks 2
1
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
A Silicon PN junction diode under reverse bias has depletion region of width 10 µm. The relative permittivity of Silicon, ɛr = 11.7 and the permittivity of free space ɛ0 = 8.854 × 10-12 F/m.The depletion capacitance of the diode per square meter is
A
100 μF
B
10 μF
C
1 μF
D
20 μF
2
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
Choose proper substitutes for X and Y to make the following statement correct Tunnel diode and Avalanche photodiode are operated in X bias and Y bias respectively.
A
X: reverse, Y: reverse
B
X: reverse, Y: forward
C
X: forward, Y: reverse
D
X: forward, Y: forward
3
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
At 300 K, for a diode current of 1 mA, a certain germanium diode requires a forward bias of 0.1435 V. Where as a certain silicon diode requires a forward bias of 0.718 V. Under the conditions stated above, the closest approximation of the ratio of reverse saturation current in germanium diode to that in silicon diode is
A
1
B
5
C
4 × 103
D
8 × 103
4
GATE ECE 1993
MCQ (More than One Correct Answer)
+2
-0
The built-in potential (Diffusion Potential) in a p-n junction
A
is equal to the difference in the Fermi level of the two sides, expressed in volts.
B
increases with the increase in the doping levels of the two sides.
C
increases with the increase in temperature.
D
is equal to the average of the Fermi levels of the two sides.
GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics