Electronic Devices and VLSI
PN Junction
Marks 1Marks 2
Semiconductor Physics
Marks 1Marks 2
IC Basics and MOSFET
Marks 1Marks 2
BJT and FET
Marks 1Marks 2
1
GATE ECE 2005
MCQ (Single Correct Answer)
+1
-0.3
A Silicon PN junction at a temperature of 20°C has a reverse saturation current of 10 pico-Amperes (pA). The reverse saturation current at 40°C for the same bias is approximately
A
20 pA
B
30 pA
C
40 pA
D
80 pA
2
GATE ECE 2005
MCQ (Single Correct Answer)
+1
-0.3
The band gap of Silicon at room temperature is:
A
1.3 eV
B
0.7 eV
C
1.1 eV
D
1.4 eV
3
GATE ECE 2004
MCQ (Single Correct Answer)
+1
-0.3
The impurity commonly used for realizing the base region of a silicon n-p-n transistor is
A
Gallium
B
Indium
C
Boron
D
Phosphorus
4
GATE ECE 2003
MCQ (Single Correct Answer)
+1
-0.3
n-type silicon is obtained by doping silicon with
A
Germanium
B
Aluminum
C
Boron
D
Phosphorus
GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics