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Electronic Devices and VLSI
PN Junction
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1
GATE ECE 1992
MCQ (Single Correct Answer)
+2
-0.6
A semiconductor is irradiated with light such that carriers are uniformly generated throughout its volume. The semiconductor is n-type with $$N_D=10^{19}/cm^3$$. If the excess electron concentration in the steady state id $$\triangle n=10^{15}/cm^3$$ and if $$\tau_p=10\;\mu\;sec$$ [minority carrier life time] the generation rate due to irradiation
A
$$is\;10^{20}\;e-h\;pairs/cm^3/sec$$
B
$$is\;10^{24}\;e-h\;pairs/cm^3/sec$$
C
$$is\;10^{10}\;e-h\;pairs/cm^3/sec$$
D
cannot be determined as the given data is insufficient
2
GATE ECE 1991
MCQ (Single Correct Answer)
+2
-0.6
A silicon sample is uniformly doped with 1016 phosphorous atoms/cm3 and 2 ×1016 boron atoms/cm3. If all the dopants are fully ionized, the material is
A
n-type with carrier concentration of 1016/cm3
B
p-type with carrier concentration of 1016/cm3
C
p-type with carrier concentration of 2 ×1016/cm3
D
n-type with carrier concentration of 2 ×1016/cm3
3
GATE ECE 1987
MCQ (More than One Correct Answer)
+2
-0
In an intrinsic semiconductor the free electron concentration depends on
A
Effective mass of electrons only.
B
Effective mass of holes only.
C
Temperature of the Semiconductor.
D
Width of the forbidden energy band of the semiconductor.
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Questions Asked from Marks 2
GATE ECE 2025 (2) GATE ECE 2024 (1) GATE ECE 2023 (2) GATE ECE 2022 (1) GATE ECE 2017 Set 1 (1) GATE ECE 2015 Set 2 (1) GATE ECE 2014 Set 4 (2) GATE ECE 2014 Set 2 (1) GATE ECE 2010 (2) GATE ECE 2005 (1) GATE ECE 2003 (2) GATE ECE 1992 (1) GATE ECE 1991 (1) GATE ECE 1987 (1)
GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics