Electronic Devices and VLSI
PN Junction
Marks 1Marks 2
Semiconductor Physics
Marks 1Marks 2
IC Basics and MOSFET
Marks 1Marks 2
BJT and FET
Marks 1Marks 2
1
GATE ECE 1994
True or False
+1
-0
A p-type silicon sample has a higher conductivity compared to an n-type sample having the same dopant concentration.
A
TRUE
B
FALSE
2
GATE ECE 1994
MCQ (Single Correct Answer)
+1
-0.3
A small concentration of minority carries is injected into a homogeneous semiconductor crystal at one point. An electric field of 10 V/cm is applied across the crystal and this moves the minority carriers a distance of 1 cm is 20 $$\mu$$ sec. The mobility (in cm2/volt-sec) will be
A
1,000
B
2,000
C
5,000
D
500,000
GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics