GATE ECE 2016 Set 2 | IC Basics and MOSFET Question 14 | Electronic Devices and VLSI

Electronic Devices and VLSI

PN Junction

Marks 1 Marks 2

Semiconductor Physics

IC Basics and MOSFET

BJT and FET

GATE ECE 2016 Set 2

MCQ (Single Correct Answer)

-0.3

A long-channel NMOS transistor is biased in the linear region with V_DS = 50 mV and is used as a resistance. Which one of the following statements is NOT correct?

If the device width W is increased, the resistance decreases.

If the threshold voltage is reduced, the resistance decreases.

If the device length L is increased, the resistance increases.

If V_GS is increased, the resistance increases.

GATE ECE 2016 Set 1

MCQ (Single Correct Answer)

-0.3

Consider the following statements for a metal oxide semiconductor field effect transistor (MOSFET):

P: As channel length reduces, OFF-state current increases.
Q:As channel length reduces, output resistance increases.
R: As channel length reduces, threshold voltage remains constant.
S: As channel length reduces, ON current increases.

Which of the above statements are INCORRECT?

P and Q

P and S

Q and R

R and S

GATE ECE 2016 Set 1

MCQ (Single Correct Answer)

-0.3

What is the voltage V_out in the following circuit? GATE ECE 2016 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 49 English

0 V

$$\left(\left|V_T\;of\;PMOS\right|\;+\;V_T\;of\;NMOS\right)/2$$

Switching threshold of inverter

V_DD

GATE ECE 2016 Set 3

MCQ (Single Correct Answer)

-0.3

The figure shows the band diagram of a Metal Oxide Semiconductor (MOS). The surface region of this MOS is in GATE ECE 2016 Set 3 Electronic Devices and VLSI - IC Basics and MOSFET Question 46 English