1
GATE ECE 2023
MCQ (Single Correct Answer)
+1
-0.33
For a MOS capacitor, $$\mathrm{V_{fb}}$$ and $$\mathrm{V_{t}}$$ are the flat-band voltage and the threshold voltage, respectively. The variation of the depletion width ($$\mathrm{W_{dep}}$$) for varying gate voltage ($$\mathrm{V_{g}}$$) is best represented by
A
B
C
D
2
GATE ECE 2017 Set 2
MCQ (Single Correct Answer)
+1
-0.3
For the circuit shown in the figure, P and Q are the inputs and Y is the output.
The logic implemented by the circuit is
The logic implemented by the circuit is
3
GATE ECE 2017 Set 2
Numerical
+1
-0
Consider an n-channel MOSFET having width W, length L, electron mobility in the channel
$$\mu_n$$ and oxide capacitance per unit area $$C_{ox}$$. If gate-to-source voltage VGS=0.7 V, drain-to source
voltage VDS=0.1V, $$\left(\mu_nC_{ox}\right)\;=\;100\;\mu A/V^2$$, threshold voltage VTH=0.3 V and (W/L) = 50,
then the transconductance gm (in mA/V) is ___________.
Your input ____
4
GATE ECE 2017 Set 2
MCQ (Single Correct Answer)
+1
-0.3
An n-channel enhancement mode MOSFET is biased at VGS > VTH and VDS > (VGS - VTH), where
VGS is the gate-to-source voltage, VDS is the drain-to-source voltage and VTH is the threshold
voltage. Considering channel length modulation effect to be significant, the MOSFET behaves
as a
Questions Asked from Marks 1
GATE ECE 2023 (1) GATE ECE 2017 Set 2 (3) GATE ECE 2016 Set 3 (1) GATE ECE 2016 Set 2 (2) GATE ECE 2016 Set 1 (2) GATE ECE 2015 Set 3 (1) GATE ECE 2014 Set 1 (3) GATE ECE 2014 Set 3 (1) GATE ECE 2014 Set 2 (1) GATE ECE 2013 (2) GATE ECE 2012 (1) GATE ECE 2011 (1) GATE ECE 2008 (2) GATE ECE 2005 (1) GATE ECE 2004 (1) GATE ECE 1994 (1)
GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics