In the circuit below, assume that the long channel NMOS transistor is biased in saturation. The small signal trans-conductance of the transistor is $g_m$. Neglect body effect, channel length modulation, and intrinsic device capacitances. The small signal input impedance $Z_{in}(j\omega)$ is _______
In the circuit shown below, $$V_1$$ and $$V_2$$ are bias voltages. Based on input and output impedances, the circuit behaves as a
Consider the CMOS circuit shown in the figure (substrates are connected to their respective sources). The gate width (W) to gate length (L) ratios $$\left( {{W \over L}} \right)$$ of the transistors are as shown. Both the transistors have the same gate oxide capacitance per unit area. For the pMOSFET, the threshold voltage is $$-$$1 V and the mobility of holes is $$40{{c{m^2}} \over {V.s}}$$. For the nMOSFET, the threshold voltage is 1 V and the mobility of electrons is $$300{{c{m^2}} \over {V.s}}$$. The steady state output voltage V0 is ___________.
